?200 7 fairchild semiconductor corporation 1 www.fairchildsemi.com fgpf70n30t rev. a fgpf70n30t 300v, 70a pdp trench igbt tm june 2007 fgpf70n30t 300v, 70a pdp igbt features general description ? high current capability ? low saturation voltage: v ce(sat) =1.5v @ i c = 40a ? high input impedance ? fast switching ?rohs complaint application . pdp system using novel trench igbt technology, fairchild?s new sesries of trench igbts offer the optimum performance for pdp applica- tions where low conduction and swit ching losses are essential. thermal characteristics notes: (1)repetitive test , pluse width = 100usec , duty = 0.1 * ic_pluse limited by max tj to-220f g e c symbol description ratings units v ces collector-emitter voltage 300 v v ges gate-emitter voltage 30 v i c pulse(1)* pulsed collector current @ t c = 25 o c 160 a p d maximum power dissipation @ t c = 25 o c 49.2 w maximum power dissipation @ t c = 100 o c 19.7 w t j operating junction temperature -55 to +150 o c t stg storage temperature range -55 to +150 o c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 o c symbol parameter typ. max. units r jc (igbt) thermal resistance, junction-to-case -- 2.54 o c / w r ja thermal resistance, junction-to-ambient -- 62.5 o c / w absolute maximum ratings
2 www.fairchildsemi.com fgpf70n30t rev. a fgpf70n30t 300v, 70 a pdp trench igbt package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted device marking device package packaging type qty per tube max qty per box fgpf70n30t FGPF70N30TTU to-220f tube 50ea - symbol parameter test conditions min. typ. max. units off characteristics bv ces collector-emitter breakdown voltage v ge = 0v, i c = 250ua 300 -- -- v ' b vces / ' t j temperature coefficient of breakdown voltage v ge = 0v, i c = 250ua -- 0.2 -- v/ o c i ces collector cut-off current v ce = v ces , v ge = 0v -- -- 250 ua i ges g-e leakage current v ge = v ges , v ce = 0v -- -- 400 na on characteristics v ge(th) g-e threshold voltage i c = 250ua, v ce = v ge 3.0 4.5 5.5 v v ce(sat) collector to emitter saturation voltage i c =20a , v ge = 15v -- 1.2 1.5 v i c =40a , v ge = 15v -- 1.5 -- v i c =70a , v ge = 15v t c = 25 o c -- 1.8 -- v i c = 70a , v ge = 15v t c = 125 o c -- 1.9 -- v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v f = 1mhz -- 3000 -- pf c oes output capacitance -- 160 -- pf c res reverse transfer capacitance -- 110 -- pf switching characteristics t d(on) turn-on delay time v cc = 200v, i c = 40a r g = 15 : , v ge = 15v resistive load, t c = 25 o c -- 32 -- ns t r rise time -- 90 -- ns t d(off) turn-off delay time -- 175 -- ns t f fall time -- 170 300 ns t d(on) turn-on delay time v cc = 200v, i c = 40a r g = 15 : , v ge = 15v resistive load, t c = 125 o c -- 30 -- ns t r rise time -- 90 -- ns t d(off) turn-off delay time -- 185 -- ns t f fall time -- 235 -- ns q g total gate charge v ce = 200v, i c = 40a v ge = 15v -- 125 -- nc q ge gate-emitter charge -- 25 -- nc q gc gate-collector charge -- 55 -- nc
3 www.fairchildsemi.com fgpf70n30t rev. a fgpf70n30t 300v, 70 a pdp trench igbt typical performance characteristics figure 1. typical output characteristics figure 2. typical output characteristics figure 3. typical saturation voltage figure 4. transfer characteristics c h a r a c t e r i s t i c s figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge temp erature at variant current level 02468 0 40 80 120 160 20v t c = 125 o c 15v 12v 10v v ge = 8v collector current, i c [a] collector-emitter voltage, v ce [v] 02468 0 40 80 120 160 20v t c = 25 o c 15v 12v 10v v ge = 8v collector current, i c [a] collector-emitter voltage, v ce [v] 24681012 1 10 100 common emitter v ce = 20v t c = 25 o c t c = 125 o c collector current, i c [a] gate-emitter voltage,v ge [v] 160 01234 0 40 80 120 160 common emitter v ge = 15v t c = 25 o c t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 25 50 75 100 125 0.8 1.2 1.6 2.0 2.4 70a 40a i c = 20a common emitter v ge = 15v collector-emitter voltage, v ce [v] collector-emittercase temperature, t c [ o c ] 4 8 12 16 20 0 4 8 12 16 20 40a i c = 20a 70a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v]
4 www.fairchildsemi.com fgpf70n30t rev. a fgpf70n30t 300v, 70 a pdp trench igbt typical performance characteristics (continued) figure 7. saturation voltage vs. v ge figure 8. capacitance characteristics figure 9. gate charge characteristics figu re 10. soa characteristics 4 8 12 16 20 0 4 8 12 16 20 40a i c = 20a 70a common emitter t c = 125 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 110 0 1000 2000 3000 4000 5000 6000 common emitter v ge = 0v, f = 1mhz t c = 25 o c c rss c oss c iss capacitance [pf] collector-emitter voltage, v ce [v] 30 0.1 1 10 100 0.01 0.1 1 10 100 500 10ms 100 p s dc operation 1ms i c max (continuous) i c max (pulsed) single nonrepetitive pulse t c = 25 o c curves must be derated linearly with increase in temperature collector current, i c [a] collector - emitter voltage, v ce [v] 0 306090120150 0 3 6 9 12 15 common emitter t c = 25 o c 100v v cc = 200v gate-emitter voltage, v ge [v] gate charge, q g [nc] 0 20406080100 10 100 common emitter v cc = 200v, v ge = 15v i c = 40a t c = 25 o c t c = 125 o c t d(on) t r switching time [ns] gate resistance, r g [ : ] 300 0 20406080100 10 100 1000 common emitter v cc = 200v, v ge = 15v i c = 40a t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] gate resistance, r g [ : ] 3000 figure 11. turn-on characteristics vs. gate resistance figure 12. turn-off characteristics vs. gate resistance
5 www.fairchildsemi.com fgpf70n30t rev. a fgpf70n30t 300v, 70 a pdp trench igbt typical performance characteristics (continued) figure 15. switching loss vs. gate resistance figure 16. switching loss vs. collector current figure 17. transient thermal impedance of igbt 0 20406080100 10 100 common emitter v ge = 15v, r g = 15 : t c = 25 o c t c = 125 o c t r t d(on) switching time [ns] collector current, i c [a] 500 0 20406080100 1000 t f 100 common emitter v ge = 15v, r g = 15 : t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] collector current, i c [a] 0 20406080100 10 100 1000 common emitter v cc = 200v, v ge = 15v i c = 40a t c = 25 o c t c = 125 o c e on e off switching loss [uj] gate resistance, r g [ : ] 2000 0 20406080100 10 100 1000 10000 common emitter v ge = 15v, r g = 15 : t c = 25 o c t c = 125 o c e on e off switching loss [uj] collector current, i c [a] figure 13. turn-on characteristics vs. collector current figure 14. turn-off characteristics vs. collector current 1e-4 1e-3 0.01 0.1 1 10 100 0.01 0.1 1 10 0.5 0.1 0.2 0.05 0.02 0.01 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c t 1 p dm t 2
6 www.fairchildsemi.com fgpf70n30t rev. a fgpf70n30t 300v, 70 a pdp trench igbt to-220f (7.00) (0.70) max1.47 (30 ) #1 3.30 0.10 15.80 0.20 15.87 0.20 6.68 0.20 9.75 0.30 4.70 0.20 10.16 0.20 (1.00x45 ) 2.54 0.20 0.80 0.10 9.40 0.20 2.76 0.20 0.35 0.10 ?3.18 0.10 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] 0.50 +0.10 ?0.05
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